Circuit for Generating Data Strobe Signal in DDR Memory Device and Method Therefor

ABSTRACT

The present invention discloses a circuit for generating a data strobe signal in a DDR memory device and a method therefor which can precisely distinguish preamble and postamble periods of the data strobe signal by generating pulses for generating the data strobe signal only in a data strobe signal input period by using an internal clock signal according to CAS latency under a read command, and generating the data strobe signal by using the pulses, and which can improve reliability of the circuit operation by precisely controlling operation timing with the internal clock signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a continuation application which is based on and claims priorityto U.S. patent application Ser. No. 11/611,922, filed Dec. 18, 2006,which is a divisional of U.S. patent application Ser. No. 10/879,878,filed Jun. 29, 2004, the disclosures of which are hereby expresslyincorporated by reference herein in their entirety for all purposes.

FIELD OF THE INVENTION

The present invention relates to a circuit for generating a data strobesignal (DQS) in a DDR memory device and a method therefor, and moreparticularly to, a circuit for generating a DQS in a DDR memory devicewhich can precisely control preamble and postamble periods of theinput/output DQS, and a method therefor.

DISCUSSION OF RELATED ART

As publicly known, a synchronous DRAM (SDRAM) synchronized with anexternal system clock has been widely used to improve an operation speedamong the semiconductor devices. The general SDRAM uses only a risingedge of a clock, but the DDR SDRAM uses both rising and falling edges ofa clock to improve an operation speed. Therefore, the DDR SDRAM isexpected as a next generation DRAM. On the other hand, a data strobesignal (DQS) is used to minimize a time skew generated between chips ofa memory chip set during the data read operation. The DQS will now bebriefly explained.

FIG. 1 is a waveform diagram illustrating the DQS.

FIG. 1 shows timing in the data read operation of the DDR SDRAM,especially when CAS latency (CL) for defining a clock number from a readcommand input clock time point to a data output time point is 2 and whena burst length (BL) for defining a number of consecutively-processeddata is 4.

In the read operation of the DDR SDRAM, when the DQS is enabled, thedata must be outputted in the rising and falling edges. Here, the DQSmust pass through a preamble state before one clock from data output,and pass through a postamble state for half a clock even after last dataoutput.

Before the preamble state, the DQS may maintain a high impedance(high-z) state which is an intermediate level between high and lowstates, or maintain a high level in a ultrahigh speed memory device suchas the GDDR III. In this case, it is difficult to set or distinguish thepreamble or postamble period of the DQS. Especially, an operation marginis reduced due to a high operation speed. It is thus more difficult toprecisely set the preamble or postamble period of the DQS. As a result,the data read operation is not efficiently performed.

SUMMARY OF THE INVENTION

The present invention is directed to a circuit for generating a datastrobe signal in a DDR memory device and a method therefor which canprecisely distinguish preamble and postamble periods of the data strobesignal by generating pulses for generating the data strobe signal onlyin a data strobe signal input period by using an internal clock signalaccording to CAS latency under a read command, and generating the datastrobe signal by using the pulses, and which can improve reliability ofthe circuit operation by precisely controlling operation timing with theinternal clock signal.

One aspect of the present invention is to provide a circuit forcontrolling data output and data strobe signal generation in a DDRmemory device, including: an internal clock generating unit forgenerating first and second internal clock signals; an enable signalgenerating unit for generating first to fourth enable signal signalsaccording to a CAS latency and the first internal clock signal byreceiving an external clock signal; a first pulse generating unit foroutputting first and second pulse signals to control the data output byreceiving the first and second enable signals and the second clocksignal; and a second pulse generating unit for outputting third andfourth pulse signals to control the data strobe signal generation byreceiving the third and fourth enable signals and the first clocksignal.

According to another aspect of the present invention, a circuit forgenerating a data strobe signal in a DDR memory device, includes: aninternal clock generating unit for generating first and second internalclock signals; an output enable signal generating unit for sequentiallygenerating single pulse output enable signals at a predeterminedinterval; an output enable signal selecting unit for selecting three ofthe output enable signals according to CAS latency, and outputting thethree output enable signals as first to third select signals; a firstenable signal generating unit for generating first and second enablesignals according to the second select signal and the first internalclock signal, respectively; a second enable signal generating unit forgenerating the third and fourth enable signals according to the firstand third select signals and the first internal clock signal,respectively; a pulse generating unit for generating first and secondpulses for controlling data output by outputting the second internalclock signal according to the first and second enable signals, andgenerating third and fourth pulses for generating the data strobe signalby outputting the first internal clock signal according to the third andfourth enable signals; and a data strobe signal generating unit forgenerating the data strobe signal by transiting a predetermined signalfrom a high to low level or a low to high level in every rising edge ofthe third or fourth pulse.

Here, the output enable signal generating unit generates the outputenable signals to have a two cycle pulse width in every one cycle.

The output enable signal selecting unit outputs the three output enablesignals consecutively generated at one cycle interval among the outputenable signals as the first to third select signals.

The output enable signal selecting unit includes: a first selecting unitfor outputting the second output enable signal as the second selectsignal according to the CAS latency; a second selecting unit foroutputting the output enable signal later than the second output enablesignal by one cycle as the third select signal according to the CASlatency; and a third selecting unit for outputting the output enablesignal earlier than the second output enable signal by one cycle as thefirst select signal according to the CAS latency.

The first enable signal generating unit includes: a first buffer unitfor outputting the second select signal as the first enable signal; adelay unit for generating the second enable signal different from thefirst enable signal by half a cycle by synchronizing a rising edge ofthe second select signal with a rising edge of the first internal clocksignal; and a second buffer unit for outputting the second enablesignal.

The second enable signal generating unit includes: a first inverter forinverting the first select signal; a second inverter for inverting thesecond select signal; a first NAND gate operated according to the outputsignals from the first and second inverters; a first buffer unit foroutputting the output signal from the first NAND gate as the thirdenable signal; a second NAND gate operated according to the outputsignal from the second inverter and an inverted signal of the secondselect signal; a delay unit for generating the fourth enable signaldifferent from the third enable signal by half a cycle by synchronizinga rising edge of the output signal from the second NAND gate with arising edge of the first internal clock signal; and a second buffer unitfor outputting the fourth enable signal.

The delay unit is a D flip-flop using a clock signal as the firstinternal clock signal.

The pulse generating unit includes: a first pulse generating unit forgenerating the first pulse by outputting the second internal clocksignal during the application of the first enable signal; a second pulsegenerating unit for generating the second pulse by outputting the secondinternal clock signal during the application of the second enablesignal; a third pulse generating unit for generating the third pulse byoutputting the first internal clock signal during the application of thethird enable signal; and a fourth pulse generating unit for generatingthe fourth pulse by outputting the first internal clock signal duringthe application of the fourth enable signal.

The first pulse generating unit includes: a first inverter for invertingthe second internal clock signal; a second inverter for inverting thefirst enable signal; and a NAND gate for generating the first pulse byoutputting the output signal from the first inverter during theapplication of the output signal from the second inverter.

The second pulse generating unit includes: a first inverter forinverting the second internal clock signal; a second inverter forinverting the second enable signal; and a NAND gate for generating thesecond pulse by outputting the output signal from the first inverterduring the application of the output signal from the second inverter.

The third pulse generating unit includes: a first inverter for invertingthe first internal clock signal; a second inverter for inverting thethird enable signal; and a NAND gate for generating the third pulse byoutputting the output signal from the first inverter during theapplication of the output signal from the second inverter.

The fourth pulse generating unit includes: a first inverter forinverting the first internal clock signal; a second inverter forinverting the fourth enable signal; and a NAND gate for generating thefourth pulse by outputting the output signal from the first inverterduring the application of the output signal from the second inverter.

According to Further another aspect of the present invention, a methodfor generating a data strobe signal in a DDR memory device includes thesteps of: selecting three consecutive output enable signals from singlepulse output enable signals generated at a predetermined interval asfirst to third select signals; generating a first enable signal by usingthe second select signal, generating a second enable signal differentfrom the first enable signal by half a cycle by delaying the firstenable signal, generating a third enable signal longer in the front andrear sides than the first enable signal by one cycle by using the firstand third select signals, and generating a fourth enable signal longerin the front and rear sides than the first enable signal by half a cycleby using the first and third select signals; generating a first pulse byoutputting a first internal clock signal during the application of thefirst enable signal, generating a second pulse by outputting the firstinternal clock signal during the application of the second enablesignal, generating a third pulse by outputting a second internal clocksignal during the application of the third enable signal, and generatinga fourth pulse by outputting the second internal clock signal during theapplication of the fourth enable signal; and generating the data strobesignal by transiting a predetermined signal from a high to low level ora low to high level in every rising edge of the third or fourth pulse.

The output enable signals are generated to have a two cycle pulse width.

The output enable signals are selected as the first to third selectsignals according to CAS latency.

The first internal clock signal is an inverted signal of the secondinternal clock signal.

One cycle from the first rising edge of the third pulse is set to be apreamble period of the data strobe signal, and half a cycle from thelast rising edge of the third pulse is set to be a postamble period ofthe data strobe signal.

The data are outputted in every rising edge of the first or secondpulse.

BRIEF DESCRIPTION OF THE DRAWINGS

Amore complete understanding of the present invention may be had byreference to the following description when taken in conjunction withthe accompanying drawings in which:

FIG. 1 is a waveform diagram showing a DQS;

FIG. 2 is a circuit diagram illustrating a circuit for generating a DQSin a DDR memory device in accordance with a preferred embodiment of thepresent invention;

FIG. 3 is a waveform diagram showing output signals from an outputenable signal generating unit of FIG. 2;

FIG. 4 is a detailed circuit diagram illustrating an output enablesignal selecting unit of FIG. 2;

FIG. 5 is a detailed circuit diagram illustrating a first enable signalgenerating unit of FIG. 2;

FIG. 6 is a detailed circuit diagram illustrating a second enable signalgenerating unit of FIG. 2;

FIG. 7 is a waveform diagram showing the operation of the first andsecond enable signal generating units of FIG. 2;

FIGS. 8A to 8D are detailed circuit diagrams illustrating first tofourth pulse generating units of FIG. 2;

FIG. 9 is a waveform diagram showing the operation of the first tofourth pulse generating units of FIG. 2; and

FIG. 10 is a waveform diagram showing simulation results of the circuitfor generating the DQS in the DDR memory device in accordance with thepreferred embodiment of the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

A circuit for generating a data strobe signal (DQS) in a DDR memorydevice and a method therefor in accordance with a preferred embodimentof the present invention will now be described in detail with referenceto the accompanying drawings. Wherever possible, the same referencenumerals will be used throughout the drawings and the description torefer to the same or like parts.

FIG. 2 is a circuit diagram illustrating the circuit for generating theDQS in the DDR memory device in accordance with the preferred embodimentof the present invention.

Referring to FIG. 2, the circuit for generating the DQS in the DDRmemory device includes an output enable signal generating unit 210, anoutput enable signal selecting unit 220, a first enable signalgenerating unit 230, a second enable signal generating unit 240, aninternal clock generating unit 250 and a pulse generating unit 260.

The output enable signal generating unit 210 generates a plurality ofoutput enable signals oe00 to oe80 in response to a read command signalREAD by synchronizing with a clock signal CLK. As shown in FIG. 3, theplurality of output enable signals oe00 to oe80 are sequentiallygenerated in every one cycle to have a width corresponding to two cyclesof the clock signal CLK. The output enable signal generating unit 210has been publicly known and widely used.

The output enable signal selecting unit 220 selects specific signalsfrom the signals oe00 to oe80 generated in the output enable signalgenerating unit 210 according to a CAS latency signal CL. Here, threesignals are selected and outputted as first to third select signalsrout1, rout2 and rout3.

The first enable signal generating unit 230 generates first and secondenable signals routen and fouten for generating pulses for controllingdata output according to the first select signal rout1 from the outputenable signal selecting unit 220 and a first internal clock signalFCLK_DLL from the internal clock generating unit 250. Here, a pulsewidth of the first and second enable signals routen and fouten isdependent upon a pulse width of the first select signal rout1 outputtedfrom the output enable signal selecting unit 220 according to the CASlatency CL.

The second enable signal generating unit 240 generates third and fourthenable signals rqsen and fqsen for generating pulses for generating theDQS according to the second and third select signals rout2 and rout3from the output enable signal selecting unit 220 and the first internalclock signal FCLK_DLL from the internal clock generating unit 250. Here,a pulse width of the third and fourth enable signals rqsen and fqsen isdependent upon a combined pulse width of the second and third selectsignals rout2 and rout3 outputted from the output enable signalselecting unit 220 according to the CAS latency CL.

The pulse generating unit 260 generates first and second pulsesrclkdoqter and fclkdoqter for controlling data output during theapplication of the first and second enable signals routen and foutenfrom the first enable signal generating unit 230, respectively, and alsogenerates third and fourth pulses rqsdoqter and fqsdoqter for generatingthe DQS during the application of the third and fourth enable signalsrqsen and fqsen from the second enable signal generating unit 240,respectively. Here, the first and second internal clock signals FCLK DLLand RCLK_DLL are outputted from the internal clock generating unit 250during the application of the first to fourth enable signals routen,fouten, rqsen and fqsen to generate the first to fourth pulsesrclkdoqter, fclkdoqter, rqsdoqter and fqsdoqter.

The pulse generating unit 260 includes first to fourth pulse generatingunits 261 to 264 for generating the first to fourth pulses rclkdoqter,fclkdoqter, rqsdoqter and fqsdoqter, respectively.

The third and fourth pulses rqsdoqter and fqsdoqter are used to generatethe DQS. The DQS generating unit 300 transits a high level to a lowlevel and a low level to a high level in every rising edge of the thirdor fourth pulse rqsdoqter or fqsdoqter, thereby generating the DQS. Acircuit for transiting a level of a signal in every rising edge has beenpublicly known, and thus explanations of the DQS generating unit 300 areomitted.

Here, one cycle from the first rising edge of the earliest pulse of thethird and fourth pulses rqsdoqter and fqsdoqter generated in the pulsegenerating unit 260 is deemed to be a preamble period of the DQS, andhalf a cycle from the last rising edge of the latest pulse of the thirdand fourth pulses rqsdoqter and fqsdoqter is deemed to be a postambleperiod of the DQS.

On the other hand, the data are outputted in every rising edge of thefirst or second pulse rclkdoqter or fclkdoqter.

The operation of the circuit for generating the DQS in the DDR memorydevice in accordance with the preferred embodiment of the presentinvention will now be described in more detail with reference to theaccompanying detailed circuit diagrams and waveform diagrams.

FIG. 4 is a detailed circuit diagram illustrating the output enablesignal selecting unit of FIG. 2.

As illustrated in FIG. 4, the output enable signal selecting unit 220 ofFIG. 2 includes first to third selecting units 221 to 223. The first tothird selecting units 221 to 223 output the first to third selectsignals rout1, rout2 and rout3, respectively, by selecting one of theoutput enable signals oe00 to oe80 from the output enable signalgenerating unit 210 (FIG. 2) according to the CAS latency CL.

The first to third selecting units 221 to 223 have the same structurebut receive different signals. The structure and operation of the firstselecting unit 221 will now be explained as an example.

The first selecting unit 221 includes five transmission gates T201 toT205 for transmitting the second, third, fourth, sixth or eighth outputenable signal oe10, oe20, oe30, oe50 or oe70 from the output enablesignal generating unit 210, respectively. The first selecting unit 221outputs only one output enable signal selected according to the CASlatency CL.

The first transmission gate T201 transmits the second output enablesignal oe10 according to first CAS latency signals CL2 z and CL2 d. Thesecond transmission gate T202 transmits the third output enable signaloe20 according to second CAS latency signals CL3 z and CL3 d. The thirdtransmission gate T203 transmits the fourth output enable signal oe30according to third CAS latency signals CL45 z and CL45. The fourthtransmission gate T204 transmits the sixth output enable signal oe50according to fourth CAS latency signals CL67 z and CL67. The fifthtransmission gate T205 transmits the eighth output enable signal oe70according to fifth CAS latency signals CL89 z and CL89.

The second selecting unit 222 has the same structure as that of thefirst selecting unit 221, and transmits the output enable signal laterthan the output enable signal selected by the first selecting unit 221by one cycle according to the CAS latency CL.

The third selecting unit 223 has the same structure as that of the firstselecting unit 221, and transmits the output enable signal earlier thanthe output enable signal selected by the first selecting unit 221 by onecycle according to the CAS latency CL.

For example, when receiving the fifth CAS latency signals CL89 z andCL89, the first selecting unit 221 of the output enable signal selectingunit 220 transmits the eighth output enable signal oe70 to be outputtedas the first select signal rout1. The second selecting unit 222transmits the ninth output enable signal oe80 later than the eighthoutput enable signal oe70 by one cycle to be outputted as the secondselect signal rout2. The third selecting unit 223 transmits the seventhoutput enable signal oe60 earlier than the eighth output enable signaloe70 by one cycle to be outputted as the third select signal rout3.

The first to third select signals rout1, rout2 and rout3 are applied tothe first and second enable signal generating units 230 and 240,respectively, and used to generate the enable signals routen and foutenfor controlling data output or the enable signals rqsen and fqsen forgenerating the DQS.

The operation for generating the first to fourth pulses routen, fouten,rqsen and fqsen by the first to third select signals rout1, rout2 androut3 will now be explained.

FIG. 5 is a detailed circuit diagram illustrating the first enablesignal generating unit of FIG. 2, FIG. 6 is a detailed circuit diagramillustrating the second enable signal generating unit of FIG. 2, andFIG. 7 is a waveform diagram showing the operation of the first andsecond enable signal generating units of FIG. 2.

Referring to FIGS. 5 and 7, the first enable signal generating unit 230includes a first buffer unit 231 for receiving the first select signalrout1 and generating the first enable signal routen, a first delay means232 for synchronizing the first select signal rout1 with the firstinternal clock signal FCLK_DLL by delaying the first select signal rout1by half a cycle, and a second buffer unit 233 for outputting the outputsignal from the first delay means 232 as the second enable signalfouten.

The first select signal rout1 is outputted as the first enable signalrouten through the first buffer unit 231. On the other hand, the risingedge of the first select signal rout1 is synchronized with the firstinternal clock signal FCLK_DLL by the first delay means 232. Here, thefirst delay means 232 can be a D flip-flop using the first internalclock signal FCLK_DLL as a clock signal.

As shown in FIGS. 6 and 7, the second enable signal generating unit 240includes a first logic unit 241 for generating the third enable signalrqsen, and a second logic unit 242 for generating the fourth enablesignal fqsen.

The first logic unit 241 includes a first inverter I211 for invertingthe second select signal rout2, a second inverter I212 for inverting thethird select signal rout3, a first NAND gate N211 for receiving theoutput signals from the first and second inverters I211 and I212, and athird buffer unit 243 for outputting the output signal from the firstNAND gate N211 as the third enable signal rqsen.

When the second select signal rout2 or the third select signal rout3 hasa high level, the third enable signal rqsen also has a high level.

The second logic unit 242 includes the second inverter I212 forinverting the third select signal rout3, a second NAND gate N212 forreceiving the output signal from the second inverter I212, and aninverted signal /routen of the first select signal generated in thefirst enable signal generating unit 230, a second delay means 244 forsynchronizing a rising edge of the output signal from the second NANDgate N212 with the first internal clock signal FCLK_DLL, and a fourthbuffer unit 245 for outputting the output signal from the second delaymeans 244 as the fourth enable signal fqsen.

When the first select signal rout1 or the third select signal rout3 hasa high level, the fourth enable signal fqsen also has a high level.

The first to fourth enable signals routen, fouten, rqsen and fqsen areapplied to the pulse generating unit 260, respectively, and used togenerate the pulses rclkdoqter and fclkdoqter for controlling dataoutput or the pulses rqsdoqter and fqsdoqter for generating the DQS.

FIGS. 8A to 8D are detailed circuit diagrams illustrating the first tofourth pulse generating units of FIG. 2, and FIG. 9 is a waveformdiagram showing the operation of the first to fourth pulse generatingunits of FIG. 2.

As illustrated in FIGS. 8A and 9, the first pulse generating unit 261generates the first pulse rclkdoqter according to the second internalclock signal RCLK_DLL and the first enable signal routen. The firstpulse generating unit 261 includes a first NAND gate N221 for receivingthe second internal clock signal RCLK_DLL and the first enable signalrouten and a first inverter I221 for generating the first pulserclkdoqter by inverting an output signal of the first NAND gate N221.

The first pulse generating unit 261 generates the first pulse rclkdoqterby outputting the second internal clock signal RCLK_DLL only during theapplication of the first enable signal routen. The first pulserclkdoqter is outputted in the form of two pulses.

The second pulse generating unit 262 generates the second pulsefclkdoqter according to the first internal clock signal FCLK_DLL and thesecond enable signal fouten. The second pulse generating unit 262includes a second NAND gate N222 receiving the first internal clocksignal FCLK_DLL and the second enable signal fouten and a secondinverter I222 for generating the second pulse fclkdoqter by inverting anoutput signal of the second NAND gate N222.

The second pulse generating unit 262 generates the second pulsefclkdoqter by outputting the first internal clock signal FCLK_DLL onlyduring the application of the second enable signal fouten. The secondpulse fclkdoqter is outputted in the form of two pulses later than thefirst pulse rclkdoqter by half a cycle.

The third pulse generating unit 263 has the same structure with thesecond pulse generation unit 262, and generates the third pulserqsdoqter by outputting the second internal clock signal RCLK_DLL onlyduring the application of the third enable signal rqsen. The third pulserqsdoqter is generated earlier than the first pulse rclkdoqter by onecycle, maintained later than the first pulse rclkdoqter by one cycle,and outputted in the form of four pulses.

The fourth pulse generating unit 264 has the same structure with thesecond pulse generation unit 263, and generates the fourth pulsefqsdoqter by outputting the first internal clock signal FCLK_DLL onlyduring the application of the fourth enable signal fqsen. The fourthpulse fqsdoqter is generated earlier than the first pulse rclkdoqter byhalf a cycle, maintained later than the first pulse rclkdoqter by half acycle, and outputted in the form of three pulses.

The following simulation results show generation of the first to fourthpulses rclkdoqter, fclkdoqter, rqsdoqter and fqsdoqter by the first tofourth enable signals routen, fouten, rqsen and fqsen.

FIG. 10 is a waveform diagram showing simulation results of the circuitfor generating the DQS in the DDR memory device in accordance with thepreferred embodiment of the present invention.

As shown in FIG. 10, the first pulse rclkdoqter is generated in the formof two pulses during the application of the first enable signal routen,and the second pulse fclkdoqter is generated in the form of two pulsesduring the application of the second enable signal fouten. The firstpulse rclkdoqter is generated by the second internal clock signalRCLK_DLL, and the second pulse fclkdoqter is generated by the firstinternal clock signal FCLK_DLL. Accordingly, a generation time point ofthe first pulse rclkdoqter is different from that of the second pulsefclkdoqter by half a cycle.

The first and second pulses rclkdoqter and fclkdoqter are used as dataoutput control signals, and thus data are outputted in every four risingedge. The four data (D1 to D4 of FIG. 9) are outputted.

The third pulse rqsdoqter is generated in the form of four pulses duringthe application of the third enable signal rqsen, and the fourth pulsefqsdoqter is generated in the form of three pulses during theapplication of the fourth enable signal fqsen. The third pulse rqsdoqteris generated by the second internal clock signal RCLK_DLL, and thefourth pulse fqsdoqter is generated by the first internal clock signalFCLK_DLL. Accordingly, generation and end time points of the third pulserqsdoqter is different from those of the fourth pulse fqsdoqter by halfa cycle.

One cycle from the first rising edge of the third pulse rqsdoqtergenerated earlier than the fourth pulse fqsdoqter is set to be thepreamble period of the DQS, and half a cycle from the fourth risingedge, namely the last rising edge of the third pulse rqsdoqter is set tobe the postamble period of the DQS. As a result, the preamble period andthe postamble period of the DQS can be precisely set.

As described earlier, in accordance with the present invention, thecircuit for generating the DQS in the DDR memory device and the methodtherefor can precisely distinguish the preamble and postamble periods ofthe DQS by generating the pulses for generating the DQS only in the DQSinput period by using the internal clock signal according to the CASlatency under the read command, and generating the DQS by using thepulses, and can improve reliability of the circuit operation byprecisely controlling operation timing with the internal clock signal.

Although the present invention has been described in connection with theembodiment of the present invention illustrated in the accompanyingdrawings, it is not limited thereto. It will be apparent to thoseskilled in the art that various substitutions, modifications and changesmay be made thereto without departing from the scope and spirit of theinvention.

1. A circuit for controlling data output and data strobe signalgeneration in a DDR memory device, comprising: an internal clockgenerating unit configured to generate first and second internal clocksignals; an output enable signal outputting unit configured tosequentially output first to third select signals in response to CASlatency; an enable signal outputting unit configured to sequentiallyoutput first and second enable signals in response to the second selectsignal and the first internal clock signal, and third and fourth enablesignals in response to the first and third select signals and the firstinternal clock signal; a pulse generating unit configured to generatefirst and second pulses for controlling data output by using the firstand second internal clock signals in response to the first and secondenable signals, and third and fourth pulses for controlling generationof a data strobe signal by using the first and second internal clocksignals in response to the third and fourth enable signals; and a datastrobe signal generating unit configured to generate the data strobesignal in response to the third and fourth pulses.
 2. The circuit ofclaim 1, wherein the enable signal outputting unit comprises: an outputenable signal generating unit configured to sequentially generate outputenable signals having a single pulse at a predetermined interval; and anoutput enable signal selecting unit configured to select three of theoutput enable signals in response to CAS latency, and output the threeoutput enable signals as the first to third select signals.
 3. Thecircuit of claim 2, wherein the output enable signal generating unitgenerates the output enable signals to have a two cycle pulse width inevery one cycle.
 4. The circuit of claim 2, wherein the output enablesignal selecting unit outputs the three output enable signalsconsecutively generated at one cycle interval among the output enablesignals as the first to third select signals.
 5. The circuit of claim 2,wherein the output enable signal selecting unit comprises: a firstselecting unit configured to output the first select signal in responseto the CAS latency; a second selecting unit configured to output thesecond select signal later than the first select signal by one cycle inresponse to the CAS latency; and a third selecting unit configured tooutput the third select signal later than the second select signal byone cycle in response to the CAS latency.
 6. The circuit of claim 5,wherein the first selecting unit outputs the first select signal byusing second, third, fourth, sixth, and eighth output enable signals ofthe output enable signals, the second selecting unit outputs the secondselect signal by using third, fourth, fifth, seventh and ninth outputenable signals of the output enable signals, the third selecting unitoutputs the third select signal by using first, second, third, fifth andseventh output enable signals of the output enable signals.
 7. Thecircuit of claim 1, wherein the enable signal outputting unit comprises:a first enable signal generating unit) configured to generate the firstand second enable signals in response to the second select signal andthe first internal clock signal, respectively; and a second enablesignal generating unit configured to generate the third and fourthenable signals in response to the first and third select signals and thefirst internal clock signal, respectively.
 8. The circuit of claim 1,wherein the pulse generating unit comprises: a first pulse generatingunit configured to generate the first pulse by using the second internalclock signal in response to the first enable signal; a second pulsegenerating unit configured to generate the second pulse by using thefirst internal clock signal in response to the second enable signal; athird pulse generating unit configured to generate the third pulse byusing the second internal clock signal in response to the third enablesignal; and a fourth pulse generating unit configured to generate thefourth pulse by using the first internal clock signal in response to thefourth enable signal.
 9. The circuit of claim 1, wherein the data strobesignal is changed to a high level when a rising edge of the third pulse,and is changed to a low level when a rising edge of the fourth pulse.10. A circuit for controlling data output and data strobe signalgeneration in a DDR memory device, comprising: an internal clockgenerating unit configured to generate first and second internal clocksignals; an enable signal generating unit configured to generate firstand second enable signals according to a CAS latency and the firstinternal clock signal; a pulse generating unit configured to generate afirst pulse signal using the second internal clock signal in response tothe first enable signal and a second pulse signal using the firstinternal clock signal in response to the second enable signal, whereinthe first and second pulse signals are used to control data output. 11.The circuit of claim 10, wherein the enable signal generating unitcomprises: an output enable signal generating unit configured tosequentially generate output enable signals having a single pulse at apredetermined interval; an output enable signal selecting unitconfigured to select three of the output enable signals in response tothe CAS latency, and outputting the three output enable signals as firstto third select signals; a first enable signal generating unitconfigured to generate the first and the second enable signals inresponse to the second select signal and the first internal clocksignal.
 12. The circuit of claim 11, wherein the output enable signalgenerating unit generates the output enable signals to have a two cyclepulse width in every one cycle.
 13. The circuit of claim 11, wherein theoutput enable signal selecting unit outputs the three output enablesignals consecutively generated at one cycle interval among the outputenable signals as the first to third select signals.